Continuous active T-gate travelling-wave transistor |
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Authors: | Sebati N Gamand P Varin C Pasqualini F Meunier J-C |
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Affiliation: | Labs. d'Electron. et de Phys. Appliquee, Limeil-Brevannes, France; |
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Abstract: | In the letter experimental results are presented which show that a continuous active gate travelling-wave transistor (TWT) can be used for medium power applications in a wide bandwidth. To reduce the gate resistance, a T-gate configuration has been chosen. This allows one to extend the frequency bandwidth of such a device. Simulations have been performed using small- and large-signal models taking in addition the parasitic capacitances into account. A distributed Schottky diode has been used to adjust the phase synchronisation and therefore to achieve flat gain.<> |
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