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碲镉汞薄膜减薄损伤的扫描电镜研究
引用本文:许秀娟,周哲,折伟林,付伟,李春领. 碲镉汞薄膜减薄损伤的扫描电镜研究[J]. 红外, 2017, 38(8): 19-22
作者姓名:许秀娟  周哲  折伟林  付伟  李春领
作者单位:华北光电技术研究所,中电科电子装备集团有限公司,华北光电技术研究所,华北光电技术研究所,华北光电技术研究所
摘    要:对由碲镉汞薄膜减薄工艺导致的损伤层的研究至关重要。采用扫描电镜研究了碲镉汞薄膜经减薄工艺后的损伤层,获得了非常有价值的实验结果。结果对由碲镉汞薄膜减薄工艺形成损伤层的认识和后续的工艺优化具有非常重要的指导意义。

关 键 词:碲镉汞;减薄;损伤层;扫描电镜;透射电镜
收稿时间:2017-04-11
修稿时间:2017-04-26

Study of Damage of Mercury Cadmium Telluride Films after Polishing by SEM
Xu Xiujuan,Zhou Zhe,She Weilin,Fu Wei and Li Chunling. Study of Damage of Mercury Cadmium Telluride Films after Polishing by SEM[J]. Infrared, 2017, 38(8): 19-22
Authors:Xu Xiujuan  Zhou Zhe  She Weilin  Fu Wei  Li Chunling
Affiliation:North China Research Institute of Electro-Optics,CETC Electronics equipment group CO,LTD,North China Research Institute of Electro-Optics,North China Research Institute of Electro-Optics,North China Research Institute of Electro-Optics
Abstract:To study the damage of a Mercury Cadmium Telluride (HgCdTe) film caused by its thinning technology is most important. By using the Scanning Electron Microscopy (SEM) to study the damage layer of the HgCdTe film after thinning, valuable experimental results are obtained. These results are of great significance both to the understanding of the damage of HgCdTe films caused by thinning technology and to the subsequent optimization of the related thinning technology.
Keywords:HgCdTe   polishing   damage layer   SEM   TEM
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