Formation of high quality ultrathin oxide/nitride (ON) stackedcapacitors by in situ multiple rapid thermal processing [DRAMcells] |
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| Authors: | Han L.K. Yoon C.W. Kim J. Yan J. Kwong D.L. |
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| Affiliation: | Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX; |
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| Abstract: | High quality, ultrathin (<30 Å) SiO2/Si3 N4 (ON) stacked film capacitors have been fabricated by in situ rapid-thermal multiprocessing. Si3N4 film was deposited on the RTN-treated poly-Si by rapid-thermal chemical vapor deposition (RTCVD) using SiH4 and NH3, followed by in situ low pressure rapid-thermal reoxidation in N2O (LRTNO) or in O2 (LRTO) ambient. While the use of low pressure reoxidation suppresses severe oxidation of ultrathin Si3N4 film, the use of N2O-reoxidation significantly improves the quality of ON stacked film, resulting in ultrathin ON stacked film capacitors with excellent electrical properties and reliability |
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