| GaN基外延结构中EBL层生长工艺对发光效率的影响 |
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| 引用本文： | 孟锡俊,李建婷,刘大为.GaN基外延结构中EBL层生长工艺对发光效率的影响[J].电子测试,2019(12):45-46,7. |
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| 作者姓名： | 孟锡俊 李建婷 刘大为 |
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| 作者单位： | 西安中为光电科技有限公司,陕西西安,710065;西安中为光电科技有限公司,陕西西安,710065;西安中为光电科技有限公司,陕西西安,710065 |
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| 摘 要： | 根据量子限域电子溢出理论及极化场引起的能带弯曲理论,我们采用不同工艺的EBL层结构,通过控制Al组分分布,在不影响P-GaN层空穴的注入的情况下,提升电子限制能力,提升芯片的发光效率。
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| 关 键 词： | 电子溢出 EBL层 电子限制能力 能带弯曲 Al组分渐变 |
Effect Of EBL Layer Growth Technology On Luminescence Efficiency In GaN Based Epitaxial Structures |
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| Meng Xijun,Li Jianting,Liu Dawei.Effect Of EBL Layer Growth Technology On Luminescence Efficiency In GaN Based Epitaxial Structures[J].Electronic Test,2019(12):45-46,7. |
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| Authors: | Meng Xijun Li Jianting Liu Dawei |
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| Affiliation: | (Xi’an Zhongwei Photoelectric Technology Co., Ltd., Xi’an Shaanxi,710065) |
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| Abstract: | According to the theory of the Electronic overflow and the band bending caused by the epitaxial structure stress-induced polarization, we adopt the EBL layer structure using different processes by controlling the Aluminum composition distribution, and then the electronically limited capacity effectively raising, under the premise, the injection of the hole from the P-GaN layer is not affect, thus the luminous efficiency of GaN-based LED epitaxial wafers is promoted. |
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| Keywords: | Electronic overflow EBL layer electronically limited ability band bending Aluminum composition gradient |
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