Simplified Z-propagating DC bias stable TE-TM modeconvertor fabricated in Y-cut lithium niobate

A TE-TM mode converter, useful at either 0.632 or 0.840 μm, has been fabricated on y-cut LiNbO₃ by Ti indiffusion with the channel waveguide placed parallel to the z-axis. For TE polarized input, the maximum TM modulation depth is 97 percent at 0.632 μm with a 5-V (pp) drive and 99 percent at 0.840 μm with a 12-V (pp) drive. A similar device operating at 1.3 μm displays 98-percent TE-TM switching at 68 V. Operation involves only coplanar electrodes placed alongside the channel acting on the r₆₁ electrooptic coefficient. A separately deposited buffer layer is unnecessary. Testing indicates a substantially greater tolerance to electrode misalignment than afforded by similar structures formed in x-cut substrates. Data illustrating immunity to photorefractive drift in the presence of a DC bias voltage is presented for 0.840-μm wavelength operation