Specific features of the effect of irradiation with electrons and neutrons on photoelectric properties of CdS single crystals nominally undoped and doped with Cu

Electrical, photoelectric, and magnetic properties of CdS single crystals undoped and doped with copper (N _Cu ≈ 10¹⁸ cm^?3) and irradiated with electrons (E = 1.2 MeV, Φ = 2 × 10¹⁷ cm^?2) and neutrons (E = 2 MeV, Φ = 10¹⁸ cm^?2) are studied. It is shown that the donor-acceptor pairs are responsible for extrinsic photoconductivity and paramagnetic properties; in particular, these pairs are represented by Cu _Cd ^? -D ⁺ complexes that are destroyed during irradiation and are formed again with time (as secondary radiation defects) in irradiated samples. It is established that the majority of paramagnetic centers and donor-acceptor pairs are located in the near-surface region of the crystal. It is confirmed that large structural defects (defect clusters) formed by irradiation with neutrons are efficient sinks for copper atoms. Specific features of isochronous annealing of paramagnetic centers and donor-acceptor pairs responsible for the variation in magnetic parameters and in the photoconductivity spectra of irradiated undoped and Cu-doped CdS samples are studied.