InSb晶片清洗研究

随着红外探测器件制备工艺的不断发展,人们对InSb晶片表面质量的要求也越来越高,但是晶片在生产过程中不可避免地会引进各种杂质。研究了一种利用兆声超声并结合药液去离子水清洗InSb晶片的方法,并对清洗后的InSb晶片进行了表面颗粒度、表面有机物和表面粗糙度等方面的测量。实验结果表明,该方法能够有效去除InSb晶片表面的颗粒、有机物和金属离子杂质,但是也会略微增大晶片表面的粗糙度。

Research on Cleaning of InSb Wafers

With the rapid development of the fabrication technology of infrared detecting devices, more and more strict requirements are put forward to the quality of the surface of InSb wafers. However, various impurities are inevitably introduced in the wafer production process. A method for cleaning InSb wafers is studied. In the method, the Megasonic and ultrasonic techniques are combined with the deionized water. After cleaning, the particles and organic matter on the wafer surface and the surface roughness are measured. The experimental result shows that this method can remove the particles, organic matter and metal ion impurities on the surface of InSb wafers effectively. But it can also increase the surface roughness of InSb wafers slightly.