RF CMOS on high-resistivity substrates for system-on-chip applications |
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| Authors: | Benaissa K Jau-Yuann Yang Crenshaw D Williams B Sridhar S Ai J Boselli G Song Zhao Shaoping Tang Ashburn S Madhani P Blythe T Mahalingam N Shichijo HS |
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| Affiliation: | Texas Instrum. Inc., Dallas, TX, USA; |
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| Abstract: | The use of a high-resistivity substrate extends the capability of standard digital CMOS technology to enable the integration of high-performance RF passive components. The impact of substrate resistivity on the key components of RF CMOS for system-on-chip (SoC) applications is discussed. The comparison includes the transistor, transmission line, inductor, capacitor and varactor, as well as the noise isolation. We also discuss the integration issues including latch-up and well-well isolation in a 0.35-/spl mu/m Cu metal pitch, 0.1-/spl mu/m-gate-length RF CMOS technology. |
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