Epitaxial Growth and Characterization of p-Type ZnO |
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Authors: | M Pan J Nause V Rengarajan R Rondon EH Park IT Ferguson |
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Affiliation: | (1) Cermet, Inc., Atlanta, GA 30318, USA;(2) Georgia Institute of Technology, School of ECE, Atlanta, GA 30332, USA |
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Abstract: | N-doped p-type ZnO thin films were grown on c-sapphire substrates, semi-insulating GaN templates, and n-type ZnO substrates by metal organic chemical vapor deposition (MOCVD). Diethylzinc and oxygen were used as precursors for
Zn and O, respectively, while ammonia (NH3) and nitrous oxide (N2O) were employed as the nitrogen dopant sources. X-ray diffraction (XRD) studies depicted highly oriented N-doped ZnO thin
films. Photoluminescence (PL) measurements showed a main emission line around 380 nm, corresponding to an energy gap of 3.26 eV.
Nitrogen concentration in the grown films was analyzed by secondary ion mass spectrometry (SIMS) and was found to be on the
order of 1018 cm−3. Electrical properties of N-doped ZnO epilayers grown on semi-insulating GaN:Mg templates were measured by the Hall effect
and the results indicated p-type with carrier concentration on the order of 1017 cm−3. |
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Keywords: | ZnO p-type doping metal organic chemical vapor deposition (MOCVD) epitaxial growth |
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