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Growth of MgO Thin Film on Silicon Substrate by MOCVD
引用本文:鲁智宽,于淑琴,黄柏标,蒋民华,王弘,王晓临,黄平. Growth of MgO Thin Film on Silicon Substrate by MOCVD[J]. 稀有金属(英文版), 1993, 0(2)
作者姓名:鲁智宽  于淑琴  黄柏标  蒋民华  王弘  王晓临  黄平
作者单位:Institute of Crystal Materials Shandong University,Jinan 250100,China,Institute of Crystal Materials,Shandong University,Jinan 250100,China,Institute of Crystal Materials,Shandong University,Jinan 250100,China,Institute of Crystal Materials,Shandong University,Jinan 250100,China,Institute of Crystal Materials,Shandong University,Jinan 250100,China,Institute of Crystal Materials,Shandong University,Jinan 250100,China,Test Centre,Shandong Normal University Jinan 250100,China
摘    要:Highly oriented MgO(111)and MgO(100)thin films have been deposited on Si(111)and Si(100)substratesby using Low Pressure MOCVD(LPMOCVD).Magnesium 2,4-pentanedionate was used as the source ma-terial.The films have a very smooth surface morphology and optical transparency with an index of refractionof 1.71(632.8 nm).Typical growth rate of the films is 1.0 μm/h.The data of X-ray diffraction analysis indi-cate that the films are fully textured with(111)and(100)orientation perpendicular to the substrate surfacerespectively.The main parameters having influence on the deposition are the substrate temperature,the totalpressure in the reaction chamber,the reaction gases and its flowrate.


Growth of MgO Thin Film on Silicon Substrate by MOCVD
Lu Zhikuan,Yu Shuqin,Huang Baibiao,Jiang Minhua,Wang Hong,Wang Xiaolin Institute of Crystal Materials,Shandong University,Jinan ,China Huang Ping Test Centre,Shandong Normal University,Jinan ,China. Growth of MgO Thin Film on Silicon Substrate by MOCVD[J]. Rare Metals, 1993, 0(2)
Authors:Lu Zhikuan  Yu Shuqin  Huang Baibiao  Jiang Minhua  Wang Hong  Wang Xiaolin Institute of Crystal Materials  Shandong University  Jinan   China Huang Ping Test Centre  Shandong Normal University  Jinan   China
Affiliation:Lu Zhikuan,Yu Shuqin,Huang Baibiao,Jiang Minhua,Wang Hong,Wang Xiaolin Institute of Crystal Materials,Shandong University,Jinan 250100,China Huang Ping Test Centre,Shandong Normal University,Jinan 250100,China
Abstract:
Keywords:MOCVD growth  MgO thin film  Si substrate
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