Temperature analysis and characteristics of highly strainedInGaAs-GaAsP-GaAs (λ > 1.17 μm) quantum-well lasers |
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| Authors: | Tansu N. Ying-Lan Chang Takeuchi T. Bour D.P. Corzine S.W. Tan M.R.T. Mawst L.J. |
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| Affiliation: | Dept. of Electr. Comput. Eng., Wisconsin Univ., Madison, WI; |
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| Abstract: | Characteristic temperature coefficients of the threshold current (T0) and the external differential quantum efficiency (T1) are studied as simple functions of the temperature dependence of the physical parameters of the semiconductor lasers. Simple expressions of characteristic temperature coefficients of the threshold current (T0) and the external differential quantum efficiency (T1) are expressed as functions as physical parameters and their temperature dependencies. The parameters studied here include the threshold (Jth) and transparency (Jtr ) current density, the carrier injection efficiency (ηinj ) and external (ηd) differential quantum efficiency, the internal loss (αi), and the material gain parameter (go). The temperature analysis is performed on low-threshold current density (λ = 1.17-1.19 μm) InGaAs-GaAsP-GaAs quantum-well lasers, although it is applicable to lasers with other active-layer materials. Analytical expressions for T 0 and T1 are shown to accurately predict the cavity length dependence of these parameters for the InGaAs active lasers |
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