Hg1—xCdxTe表面电子的子能带结构

讨论了Hg_(1-x)Cd_xTe MIS结构N型反型层电子子能带结构的理论和实验研究结果。描述了采用电容-电压谱,回旋共振谱和磁导振荡谱定量地研究电子子能带结构的模型和方法。推导得到的子能带色散关系,朗道能级和有效g~*因子,与测得的子能带电子的回旋共振和自旋共振结果符合得很好,从而可以定量地研究由于表面电子的自旋轨道相互作用引起的零场分裂效应,朗道能级的移动、交叉,波函数的混合效应以及电致自旋分裂的色散关系。

SURFACE ELECTRON SUBBAND STRUCTURES OF Hg_(1-x)Cd_xTe

The theoretical and experimental results about the surface electron subband structure in N-type inversion layer for the P-type Hg_(1-x)Cd_xTe MIS structure samples have been disoussed. The model and the related method to investigate quantitatively the surface electron subband structure by using the capacitance-voltage spectroscopy, cyclotron resonance spectroscopy and magneto-conductivity oscillations have been desoribed. Starting from the Kane model and taking into account the surface electron spin-orbit interaction, the subband dispersion relation, Landau level and effective g~* factor have been obtained, which agree well with the subband electron cyclotron resonance and spin resonance results measured for the P-type Hg_(1-x)Cd_xTe samples. Based on these results, the zero field spin splitting effect, the shifting and crossing effect of Landau levels as well as the wave-function mixture, etc., arising from the surface electron spin-orbit interaction have been investigated quantitatively.