| SiCxNy：H薄膜的FTIR研究 |
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| 引用本文： | 郭慧,张伟.SiCxNy：H薄膜的FTIR研究[J].红外与毫米波学报,1991,10(4):253-258. |
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| 作者姓名： | 郭慧 张伟 |
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| 作者单位： | 复旦大学物理系，复旦大学物理系，复旦大学物理系，复旦大学物理系，复旦大学物理系，复旦大学物理系，复旦大学物理系 上海 200433，上海 200433，上海 200433，上海 200433，上海 200433，上海 200433，上海 200433 |
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| 基金项目： | 红外物理国家重点实验室部分资助课题 |
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| 摘 要： | 用低温PECVD方法制备出成分连续可交的SiC_xN_y:H薄膜,用FTIR和AES方法分析了薄膜的组分。实验表明FTIR吸收谱可以快速地估计SiC_xN_y:H薄膜中N/N+C的比例,快速灯光退火薄膜的FTIR分析表明用PECVD制作的SiC_xN_y:H薄膜用做硅器件钝化膜具有较好的热稳定性。
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| 关 键 词： | SiCxNy：H 薄膜 FTIR PECVD |
FTIR STUDIES OF SiC_xN_y: H THIN FILMS |
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| GUO HUI,ZHANG WEI,ZHU JINBING,SU CHENGPEI,WU JIANGEN,WANG JITAO,Qu FENGYUAN.FTIR STUDIES OF SiC_xN_y: H THIN FILMS[J].Journal of Infrared and Millimeter Waves,1991,10(4):253-258. |
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| Authors: | GUO HUI ZHANG WEI ZHU JINBING SU CHENGPEI WU JIANGEN WANG JITAO Qu FENGYUAN |
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| Abstract: | SiC_xN_y: H thin films with continuously variable compositions have been preparedby using the plasma-enhanced chemical vapor-deposition (PECVD) method. The composition of the films is analyzed by using FTIR and AES. The experimental results show that the ratio of N/(N+C)in the SiC_xN_y: H films can be obtained rapidly from the FTIR absorption spectrum. Analyses of films thermally annealed rapidly by using FTIR indicate that the passivated films, which have been prepared by PECVD, have good thermal stabilities. |
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