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Improved electrical properties using SrTiO3/Y2O3 bilayer dielectrics for MIM capacitor applications |
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| Authors: | Maurice Kahn Christophe Valle Emmanuel Defay Catherine Dubourdieu Marceline Bonvalot Serge Blonkowski Jean-Raoul Plaussu Pierre Garrec Thierry Baron |
| Affiliation: | aLaboratoire des Technologies de la Microélectronique (LTM), UMR CNRS 5129, 17 Avenue des Martyrs, 38054 Grenoble Cedex 9, France;bCEA-LETI, 17 Avenue des Martys, 38054 Grenoble Cedex 9, France;cLaboratoire des Matériaux et du Génie Physique (LMGP), UMR CNRS 5628, INPG Minatec 3, Parvis Louis Néel, Boıˆte Postale 257, 38016 Grenoble Cedex 1, France;dST Microelectronics, 850 Rue Jean Monnet, 38926 Crolles Cedex, France |
| Abstract: | In this paper, we show that the capacitance–voltage linearity of MIM structures can be enhanced using SrTiO3 (STO)/Y2O3 dielectric bilayers. The C(V) linearity is significantly improved by combining two dielectric materials with opposite permittivity-voltage responses. Three STO/Y2O3 stacks with different thicknesses were realized and compared to a 20 nm STO single layer structure. We observed that an increase in the Y2O3 thickness leads to an improvement in the voltage linearity, while maintaining an overall capacitance density greater than 10 fF/μm2. |
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