| 利用高频C-V特性评价CMOS工艺 |
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| 引用本文： | 熊海,孔学东,章晓文,汪顺婷. 利用高频C-V特性评价CMOS工艺[J]. 半导体技术, 2010, 35(4): 383-387. DOI: 10.3969/j.issn.1003-353x.2010.04.021 |
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| 作者姓名： | 熊海 孔学东 章晓文 汪顺婷 |
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| 作者单位： | 广东工业大学材料学院,广州510006;工业和信息化部电子第五研究所,广州510610;工业和信息化部电子第五研究所,广州,510610;广州圣大电子有限公司,广州,510430 |
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| 摘 要： | MOS结构电容由于其结构简单并且和CMOS工艺兼容,是进行实时工艺监控和测试工艺参数的重要测试结构。采用通过对相同工艺不同厂家生产的两批电容样品进行高频C-V测试,编程计算提取器件相关参数。通过对比同一厂家样品中相同面积MOS电容和不同面积电容参数的分布特性,以及不同厂家样品各个参数的差异,对CMOS相关工艺进行评价。为工艺过程以及相关设计的改进提供参考依据。
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| 关 键 词： | MOS电容 界面态 高频C-V测试 |
Evaluation of CMOS Technology with High Frequency C-V Characterization |
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| Xiong Hai,Kong Xuedong,Zhang Xiaowen,Wang Shunting. Evaluation of CMOS Technology with High Frequency C-V Characterization[J]. Semiconductor Technology, 2010, 35(4): 383-387. DOI: 10.3969/j.issn.1003-353x.2010.04.021 |
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| Authors: | Xiong Hai Kong Xuedong Zhang Xiaowen Wang Shunting |
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| Abstract: | The structure of MOS capacitor is simple and compatible with CMOS technology,it is an important test structure to monitor real-time process and test the process parameters.Two groups of MOS capacitors produced by different manufacturers but with the same process were used as high-frequency C- V test samples.The device parameters were calculated by programming.By comparing the distribution properties of parameters of the same and different area of MOS capacitors produced by the same manufacturer,as well as d... |
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| Keywords: | MOS capacitor interface state high freqency C-V test |
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