A graded-gap photoelectric detector for ionizing radiation

A heterostructure consisting of a graded-gap p-Al_xGa_1?xAs layer on an n-GaAs substrate is studied in relation to its role as a photoelectric-response detector of X-ray photons and α particles. It is found that the current-power sensitivity of the detector is as high as 0.13 A/W and the voltage-power sensitivity exceeds 10⁶ V/W. The effect of preliminary irradiation with 5.48-MeV α particles (²⁴¹Am) on the detector’s sensitivity is studied. It is established that the detector’s sensitivity is reduced by a factor of 1.5–2 after irradiation with α particles at a dose of 5 × 10⁹ cm^?2. A further increase in the radiation dose to 4 × 10¹⁰ cm^?2 does not affect the detector’s sensitivity.