Application of Si MBE to microwave hyperabrupt diodes

Hyperabrupt impurity profiles were formed by the Si molecular beam epitaxy (MBE) technique. Thin Sb-doped n-type epitaxial layers grown on n⁺substrates were used to successfully fabricate hyperabrupt varactor diodes. The characteristics of microwave diodes containing hyperabrupt profiles produced by a conventional ion-implantation and drive-in technique were compared with those having profiles "grown-in" by the MBE technique. The diodes made from Si-MBE films exhibited superior RF performance.