VO2/TiO2复合薄膜的结构和红外光学性质研究

采用溶胶凝胶法在白云母沿（001）方向的解理表面制备VO2/TiO2热致相变复合薄膜。利用X射线衍射仪（XRD），X射线光电子能谱仪（XPS），原子力显微镜（AFM）等手段分析了薄膜的微观结构和表面形貌，通过原位傅里叶变换红外光谱（in-situ FTIR）分析复合薄膜在不同温度下的红外透过率，研究其热致相变特性。结果表明，复合薄膜在云母解理面表面呈VO2（011）/TiO2（101）取向生长，表面致密平整。复合薄膜在金属-半导体相变前后表现出优异的光学开关效应，相变过程中的红外光（波长为4 m）透过率变化（Tr）为75.5%；相变过程陡然，透过率变化率（-dTr/dT）达15.7%/℃，滞回温宽减小到8 ℃。

Structure and infrared optical properties of VO2/TiO2 multilayer film

The VO2/TiO2 films were fabricated by a sol-gel method on the(001) oriented cleavage surface of muscovite slices. The X-ray diffractometer(XRD), X-ray photoelectron spectroscopy(XPS) and atomic force microscopy(AFM) were used to investigate the microstructure and describe the morphology of the films. The infrared transmittance spectrums of the VO2/TiO2 films at different temperatures were determined by in-situ Fourier transform infrared spectroscopy(FTIR), and the spectrums were used to analyze the thermochromic properties of the VO2/TiO2 films. The results show that the composite films are preferred VO2(011)/TiO2(101) orientated on the muscovite substrate with compact structure and smooth surface. The VO2/TiO2 films exhibit a significant infrared optic switching of 75.5% at the wavelength of 4 m during the metal-semiconductor phase transition(MST) process. The phase transition process of the composite film is quite sharp with a dTr/dT of 15.7%/℃, and the hysteresis width of films decreases to 8 ℃.