两种氧化方法对InSb探测器钝化效果的研究

比较了阳极氧化和Photo-CVD氧化两种钝化方式制备InSb 探测器的性能，结果表明前者反偏漏电流小，击穿电压是后者的5倍，背景光电流和零偏阻抗基本相同。C-V测试结果:前者固定表面电荷密度为21011 cm-2，后者为1.51011 cm-2。两种氧化方法制备的器件经过高温高湿老化试验后，在反偏1 V时，阳极氧化器件漏电比变化率只有Photo-CVD氧化器件的50%，二者背景光电流均有增加，可能与器件光敏面扩大有关。阳极氧化钝化方法，工艺过程易于控制，钝化效果一致性较好，器件的界面状态更加稳定。

Passivation of InSb detector with two oxide method

The performance of InSb detectors with anodic oxide and photo-CVD oxide had been compared in this paper. It showed that leak current of detectosr with anodic oxide was less than those with photo-CVD oxide,and breakage voltage of the former detectors was as much as 5 times of the latter ones, but the photocurrent and impedance of the former ones was the same as the latter.The results of capacitance-voltage(C-V) characteristics showed that fixed charge density of the anodic detectors was 21011 cm-2, and the latter was 1.51011 cm-2. After ageing experiment, when inversion bias was 1 V, the change rate of leak current ratio of the former was only 50% of the latter, while the photocurrent of detectors with both methods increase,which was possible related to photosensitive area's expansion.The anodic oxide passivation of detector had the three advantage of the process control, the fabricate uniformity and the stability of interface state.