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Ion beam induced desorption from thin films: SiO2 single layers and SiO2/Si multilayers |
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| Authors: | W. M. Arnoldbik N. Tomozeiu F. H. P. M. Habraken |
| Affiliation: | Interface Physics, Debye Institute, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, Netherlands |
| Abstract: | The occurrence of O2 molecular loss from the bulk of SiO2 single layers and SiO2/Si multilayers as a result of 50 MeV Cu9+ irradiation has been investigated. This process did not take place with a significant rate, if it occurs at all. Instead both Si and O are removed from the SiO2 surface region, releasing molecular O2. If an elemental Si layer is on top in a multilayer, removal of Si and O with an appreciable rate is not observed. The irradiation creates bubbles in the SiO2/Si multilayers, which contain O2. The distinct SiO2 sublayers remain chemically intact. The bubbles deteriorate the depth resolution in elastic recoil detection. |
| Keywords: | Silicon oxide multilayers Electronic sputtering Permeability Stress Radiation damage Elastic recoil detection |
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