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Evaluation of the Schottky Barrier Parameters in the Micron-Size Metal-Semiconductor Contacts |
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| Authors: | Averin S.V. Lyubchenko V.E. |
| Affiliation: | Russian Acad. of Sci., Moscow; |
| Abstract: | We show that under certain conditions the submillimeter wave detector response of a Schottky barrier diode is a linear function of applied bias and allows evaluation of the barrier height and the near-surface doping level of semiconductor in the micron-size Schottky barrier contacts. |
| Keywords: | |