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Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave – Effects of baffle shape
Authors:Y Masuda  A Suzuki  Y Mikawa  Y Kagamitani  T Ishiguro  C Yokoyama  T Tsukada
Affiliation:1. Research Center for Compact Chemical Process, National Institute of Advanced Industrial Science and Technology, 4-2-1 Nigatake, Miyagino-ku, Sendai 983-8551, Japan;2. Mitsubishi Chemical Corporation, 1000, Higashi-Mamiana, Ushiku 300-1295, Japan;3. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;4. Tohoku University, 6-6-07, Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;1. School of Electric Power, South China University of Technology, Guangdong 510640, China;2. School of Energy, Power and Mechanical Engineering, North China Electric Power University, Beijing 102206, China;3. Energy and Sustainability Research Division, Faculty of Engineering, University of Nottingham, University Park, Nottingham NG7 2RD, UK;1. Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan;2. Institute of Environmental Science and Technology, The University of Kitakyushu, 1-1 Hibikino, Wakamatsu-ku, Kitakyushu-shi, Fukuoka 808-0135, Japan;1. A. I. Alikhanian National Science Laboratory (Yerevan Physics Institute), 2 Alikhanian Br. Street, 0036 Yerevan, Armenia;2. Faculty of Physics, Yerevan State University, 1 Alex Manoogian Street, 0025 Yerevan, Armenia;1. Département de Génie Physique, (LPMF), Faculté des Sciences, Université des Sciences et de la Technologie d′Oran, Mohamed Boudiaf, Oran, Algeria;2. LGCgE, Polytech''Lille, Université Lille 1 Sciences et Technologie, Cité Scientifique, Avenue Paul Langevin, 59655 Villeneuve D′Ascq Cedex, France;1. Helmholtz-Zentrum Dresden- Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany;2. Physics Department, Pune University, Pune 411007, India;3. European XFEL GmbH, Albert-Einstein-Ring 19, 22603 Hamburg, Germany;4. DESY, Notkestr. 85, 22607 Hamburg, Germany
Abstract:The numerical simulation of an ammonothermal process for growing GaN bulk single crystals has been performed by using the SC/Tetra computational fluid dynamics software. The autoclave is assumed to be axisymmetric. Heat transfer by natural convection is discussed in the case of flat and funnel-shaped baffles. Simulation results show that the optimum baffle angle is approximately 20°. This result is identical to that obtained in our previous study on the hydrothermal ZnO crystal growth process.
Keywords:
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