Low temperature plasma-assisted oxidation and thin-film deposition processes for forming device-quality SiO2/Si and composite dielectric-SiO2/Si heterostructures |
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| Authors: | G Lucovsky T Yasuda Y Ma S Habermehl S S He and D J Stephens |
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| Affiliation: | Department of Physics, and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA |
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| Abstract: | In the high-temperature thermal oxidation of Si, the SiO2/Si interface is continuously regenerated as the bulk oxide grows. This paper describes an alternative low temperature, 200–300 °C, plasma-assisted process that optimizes electrical properties of SiO2/Si interfaces and bulk SiO2 layers by separately controlling interface formation and bulk oxide deposition. Composite dielectrics, oxide/nitride (ON) and oxide (ONO), have been fabricated by extending the low temperature plasma-assisted processes to include deposition of Si3N4 films. The electrical properties of SiO2/Si structures formed by the two-step, low temperature oxidation-deposition process are essentially the same as those of SiO2/Si structures formed by high temperature, 850–1050 °C, thermal oxidation. The electrical properties of devices incorporating ON and ONO composite dielectrics are degraded with respect to the SiO2/Si structures, but are similar to those of composite dielectrics formed by combinations of high temperature processing. |
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