GaInAsP dual wavelength laser |
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| Authors: | Piccirilli A.B. Dutta N.K. Greuzka L.A. Karlicek R.F. Wynn J.D. |
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| Affiliation: | AT&T Bell Labs., Murray Hill, NJ; |
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| Abstract: | The fabrication and performance characteristics of a dual wavelength laser emitting near 1.3 μm and 1.55 μm are described. The lasers are of the etched mesa buried heterostructure type, and utilise semi-insulating InP layers both the lateral optical confinement and current confinement. The 1.55 μm emission is at a single wavelength by virtue of the frequency selective feedback provided by a grating etched on the substrate. The lasers have threshold currents in the 20 to 40 mA range, and have quantum efficiencies comparable to single emitter lasers |
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