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Studies on structural and electrical properties of copper-doped zinc oxide powders prepared by a solid state method at high temperatures
Abstract:Abstract

The synthesis, crystal structure and electrical conductivity properties of Cu-doped ZnO powders (in the range of 0.25 – 15 mole %) is reported. I-phase samples, which were indexed as single phase with a hexagonal (wurtzite) structure in the Cu-doped ZnO binary system, were determined by X-ray diffraction. The limit solubility of Cu in the ZnO lattice at this temperature is 5 mole % at 1000°C. The impurity phase was determined as CuO when compared with standard XRD data using the PDF program. We focused on single I-phase ZnO samples which synthesised at 1000°C because the limit solubility range is widest at this temperature. It was observed that the lattice parameters a increased and c decreased with Cu doping concentration. The morphology of the I-phase samples was analysed with a scanning electron microscope. The electrical conductivity of the pure ZnO and single I-phase samples were studied using the four-probe dc method at temperatures between 100 and 950°C in an air atmosphere. The electrical conductivity values of pure ZnO and 5 mole % Cu-doped ZnO samples at 100°C were 2 × 10?6 and 1.4 × 10?4 ohm?1 cm?1, and at 950°C they were 1.8 and 3.4 ohm?1 cm?1, respectively. In other words, the electrical conductivity slightly increased with Cu doping concentration. Also, it was observed that the activation energy of the I-phase samples was decreased with Cu doping concentration.
Keywords:II –VI semiconductors  zinc oxide and doped zinc oxide  four-probe dc method
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