High-Temperature Dielectrics in the BiScO3–BaTiO3–(K1/2Bi1/2)TiO3 Ternary System |
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| Authors: | Jong Bong Lim Shujun Zhang Namchul Kim Thomas R Shrout |
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| Affiliation: | Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802;
Department of Advanced Materials, Gongju National University, Chungnam 314-701, Korea |
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| Abstract: | Perovskite solid solution in the (1? x )0.4BiScO3–0.6BaTiO3]+ x (K1/2Bi1/2)TiO3 BSBT–KBT x ] system was synthesized using conventional sintering and hot-isostatic pressing. Dielectric properties of BSBT ceramics with different dopant levels of KBT were characterized as a function of temperature and frequency for potential use of high-temperature capacitors. The BSBT ceramics with KBT exhibited high dielectric permittivities (?r) (>1700 at RT) and low dielectric loss over the temperature range from 100° to 300°C, with flat temperature coefficients of permittivity (TC?s). In addition, BSBT ceramics with increasing KBT were observed to possess dielectric relaxation characteristics at temperatures (>RT) as observed in lead-based relaxors. Furthermore, high energy densities, being on the order of 4.0 J/cm3 at 220 kV/cm was observed for the BSBT–KBT20 ceramics from the electric-field polarization behavior. |
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