| 纳米电子器件及其集成 |
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| 引用本文： | 刘明,陈宝钦,谢常青,王丛舜,龙世兵,徐秋霞,李志钢,易里成荣,涂德钰,商立伟.纳米电子器件及其集成[J].半导体学报,2006,27(13):7-10. |
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| 作者姓名： | 刘明 陈宝钦 谢常青 王丛舜 龙世兵 徐秋霞 李志钢 易里成荣 涂德钰 商立伟 |
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| 作者单位： | 中国科学院微电子研究所 纳米加工与新器件集成实验室，北京 100029;中国科学院微电子研究所 纳米加工与新器件集成实验室，北京 100029;中国科学院微电子研究所 纳米加工与新器件集成实验室，北京 100029;中国科学院微电子研究所 纳米加工与新器件集成实验室，北京 100029;中国科学院微电子研究所 纳米加工与新器件集成实验室，北京 100029;中国科学院微电子研究所 纳米加工与新器件集成实验室，北京 100029;中国科学院微电子研究所 纳米加工与新器件集成实验室，北京 100029;中国科学院微电子研究所 纳米加工与新器件集成实验室，北京 100029;中国科学院微电子研究所 纳米加工与新器件集成实验室，北京 100029;中国科学院微电子研究所 纳米加工与新器件集成实验室，北京 100029 |
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| 摘 要： | 对基于Top-Down加工技术的纳米电子器件如：单电子器件、共振器件、分子电子器件等的研究现状、面临的主要挑战等进行了讨论. 采用CMOS兼容的工艺成功地研制出单电子器件，观察到明显的库仑阻塞效应；在半绝缘GaAs衬底上制作了AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs双势垒共振隧穿二极管,采用环型集电极和薄势垒结构研制的共振隧穿器件，在室温下测得其峰谷电流比高达13.98，峰电流密度大于89kA/cm2；概述了交叉阵列的分子存储器的研究进展.
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| 关 键 词： | 自上而下的纳米加工 纳米器件 单电子器件 共振器件 |
Nano Electrical Devices and Integration |
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| Liu Ming,Chen Baoqin,Xie Changqing,Wang Congshun,Long Shibing,Xu Qiuxi,Li Zhigang,Yili Chengrong,Tu Deyu and Shang Liwei.Nano Electrical Devices and Integration[J].Chinese Journal of Semiconductors,2006,27(13):7-10. |
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| Authors: | Liu Ming Chen Baoqin Xie Changqing Wang Congshun Long Shibing Xu Qiuxi Li Zhigang Yili Chengrong Tu Deyu and Shang Liwei |
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| Affiliation: | Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China;Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China;Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China;Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China;Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China;Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China;Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China;Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China;Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China;Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China |
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| Abstract: | The progress and challenge on quantum mechanism nano-devices such as single-electron transistors (SET),resonant tuneling diodes(RTD), and molecular devices are investigated and discussed.The SET with CMOS compatible technology is successfully fabricated,and the Coulomb blockade effect is clearly observed.AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs double-barrier resonant tunneling diodes (DBRTDs) grown on semi-insulated GaAs substrate with molecular beam epitaxy are demonstrated.With ringed collector and thin barriers,the devices exhibit a maximum PVCR of 13.98 and a peak current density of 89kA/cm2 at room temperature.Finally,the progress of molecular memory with cross-bar structure is summarized. |
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| Keywords: | top-down fabrication nano-device single electron device resonant tunneling device |
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