| 氢化非晶硅带隙态密度光诱导变化的研究 |
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| 引用本文： | 王广民. 氢化非晶硅带隙态密度光诱导变化的研究[J]. 固体电子学研究与进展, 1996, 16(1): 44-47 |
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| 作者姓名： | 王广民 |
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| 作者单位： | 南京理工大学电子工程与光电技术学院 |
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| 摘 要： | 报导了与Ｓｔａｅｂｌｅｒ－Ｗｒｏｎｓｋｉ效应相关的氢化非晶硅（α－Ｓｉ：Ｈ）带隙态密度的光诱导变化，结果表明光照将使α－Ｓｉ：Ｈ带隙上半部分态密度的分布发生变化，采用ＡＭ１太阳光谱＊光照两小时使得导带迁移率边以下０．７ｅＶ处的带隙态密度从４×１０１６ｃｍ－３ｅＶ－１，增大到１×１０１７ｃｍ－３ｅＶ－１。
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| 关 键 词： | 氢化非晶硅，带隙态密度，Staebler－Wronski效应 |
A Study of Photoinduced Changes in Density of Gap States in Hydrogenated Amorphous Silicon |
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| Wang Guangmin. A Study of Photoinduced Changes in Density of Gap States in Hydrogenated Amorphous Silicon[J]. Research & Progress of Solid State Electronics, 1996, 16(1): 44-47 |
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| Authors: | Wang Guangmin |
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| Abstract: | We have observed a photoinduced modification of bulk density of gap states in hydrogented amorphous silicon(α-St:H) associated with the staeblerwronski effect.The results indicated quite clearly that the density of states in the upper-half of the gap was changed by exposing.Two hour exposure(AMl) made that the density of the gap states 0.7 eV below Ec changed from 4×1016cm-3eV-1to 1×1017cm-3eV-1. |
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| Keywords: | α-Si:H Density of Gap states S-W Effect |
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