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忆阻元件的研究进展
引用本文:俎云霄,于歆杰.忆阻元件的研究进展[J].电气电子教学学报,2010,32(6):48-50.
作者姓名:俎云霄  于歆杰
作者单位:[1]北京邮电大学电子工程学院,北京100876 [2]清华大学电机工程与应用电子技术系,北京100084
摘    要:忆阻元件是一种联系电荷和磁链之间关系的新的无源电路元件,可以称其为第四类基本电路元件。本文首先介绍了忆阻元件的概念、基本模型及其数学表示方法,然后介绍了目前国内外的研究现状。国内研究主要集中于忆阻元件的数学模性、特性及与其它元件组成的简单电路的性能;国外的研究主要集中于忆阻元件在各方面的潜在应用以及由忆阻概念进一步推测忆容和忆感元件及其系统。

关 键 词:忆阻元件  数学模型  忆容元件  忆感元件

Review of Study on Memristor
ZU Yun-xiao,YU Xin-jie.Review of Study on Memristor[J].Journal of Electrical & Electronic Engineering Education,2010,32(6):48-50.
Authors:ZU Yun-xiao  YU Xin-jie
Affiliation:1. School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876,China; 2. Dept. Electrical Engineering, Tsinghua University, Beijing 100084,China)
Abstract:Memristor is a new passive circuit element which provides a functional relation between charge and magnetic flux. Memristor can be called the fourth circuit element. The basic concept, model and mathematical expression of memristor are introduced firstly, and then the review about study on memristor in China and other countries is given. The study on memristor focused on its mathematical model, properties and the performances of some simple circuits which are consist of memristor and other elements in China. In other conutries the study focused on the memrisor potential application in all fields and the deduction of memcapacitor, meminductor, the memcapacitative and meminductive systems based on memristor.
Keywords:memristor  mathematical model  memcapacitor  meminductor
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