Nanoscale structure formation by plasma etching |
| |
Authors: | A. A. Golishnikov M. G. Putrya E. N. Rybachek |
| |
Affiliation: | 1.Moscow State Institute of Electronic Technology (Technical University),Zelenograd, Moscow,Russia |
| |
Abstract: | Process of isotropic plasma etching of polysilicon to form nanostructures has been developed and optimized. Dependences of the technological characteristics of the isotropic plasma etching process of polysilicon on its operational parameters have been obtained. The results were to form nanowire silicon field effect transistors and a sensitive vibro-resonant nanoelement for an atom mass sensor. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |