ZnO缓冲层对Mg0.3Zn0.7O紫外探测器的影响

利用溶胶-凝胶法制备了Mg0.3Zn0.7O薄膜,并制作了金属-半导体-金属结构的深紫外探测器.研究了高质量ZnO缓冲层的引入对Mg0.3Zn0.7O薄膜的吸收谱和结晶特性以及Mg0.3Zn0.7O紫外探测器响应参数的影响.实验结果表明:ZnO缓冲层的引入使Mg0.3Zn0.7O薄膜的紫外-可见光吸收谱有轻微的红移,但可以明显提高薄膜的结晶质量,同时ZnO/Mg0.3Zn0.7O探测器的I-V特性表明,ZnO缓冲层的引入可以显著提高器件的光电流,改善其响应特性,在20V偏压下将Mg0.3Zn0.7O探测器的响应度由0.035 A/W提高至0.63 A/W.

Effect of ZnO Buffer Layer on Mg0.3Zn0.7O Ultraviolet Detectors

Mg0.3Zn0.7O thin films were prepared by sol gel method, and deep ultraviolet detectors with metal semiconductor metal structure were fabricated. Effects of high quality ZnO buffer layer on the optical properties of the Mg0.3Zn0.7O films and the I V characteristics of the detectors were investigated. The results show that a slight red shift occurrs in the UV visible absorption spectrum of Mg0.3Zn0.7O thin film with ZnO buffer layer. However, the introduction of the ZnO buffer layer obviously improves the crystal quality of the film. Furthermore, the I V curves of the ultraviolet detectors exhibit that the photocurrent of the device increases significantly with the ZnO buffer layer. At a bias of 20V, the responsivity of the detector increases from 0.035A/W to 0.63A/W.