| 射频Si/SiGe/Si HBT的研究 |
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| 引用本文： | 廖小平殷刚毅.射频Si/SiGe/Si HBT的研究[J].电子器件,2003,26(2):136-138. |
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| 作者姓名： | 廖小平殷刚毅 |
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| 作者单位： | 东南大学微电子中心,南京,210096 |
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| 基金项目： | 东南大学校科研和教改项目，， |
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| 摘 要： | 在Si／SiGe／SiHBT与Si工艺兼容的研究基础上，对射频Si／SiGe／SiHBT的射频特性和制备工艺进行了研究，分析了与器件结构有关的关键参数寄生电容和寄生电阻与Si／SiGe/Si HBT的特征频率fT和最高振荡频率fmax的关系，成功地制备了fT为2．5CHz、fmax为2．3GHz的射频Si／SiGe／SiHBT，为具有更好的射频性能的Si／SiGe／Si HBT的研究建立了基础。
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| 关 键 词： | Si／SiGe／SiHBT 特征频率fT 最高振荡频率fmax |
| 文章编号： | 1005-9490(2003)02-0136-03 |
| 修稿时间： | 2002年12月19 |
Studies on RF Si/SiGe/Si HBT |
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| LIAO Xiaoping YIN Gangyi.Studies on RF Si/SiGe/Si HBT[J].Journal of Electron Devices,2003,26(2):136-138. |
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| Authors: | LIAO Xiaoping YIN Gangyi |
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| Abstract: | Based on the process which the Si/SiGe/Si HBT is compatibility with Si, the researches on RF Si/SiGe/Si HBT's RF characterization and its fabrication have been done. The dependence of device characterization frequency fT and maximum oscillation frequency fmax on the key parameters: parasitical resistances and capacitances were analyzed, and these parameters were decided by device construction. RF Si/SiGe/Si HBT is fabricated, whose fT reaches 2.5GHz and ft reaches 2.3GHz. Based on above researches, the better RF Si/SiGe/Si HBT will be made. |
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| Keywords: | Si/SiGe/Si HBT characteristic frequency fT maximum oscillation frequency fmax |
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