| 化学束外延及其在半导体材料与器件中的应用 |
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| 引用本文： | 钟景昌.化学束外延及其在半导体材料与器件中的应用[J].半导体光电,1990,11(1):40-48. |
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| 作者姓名： | 钟景昌 |
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| 作者单位： | 长春光机学院 |
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| 摘 要： | 本文介绍了薄膜晶体生长的最新技术--化学束外延(CBE),通过与分子束外延(MBE)和金属有机化学汽相沉积(MOCVD)技术的比较,说明了这一新技术的基本概念,生长动力学以及在半导体材料和激光器件方面的应用.
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| 关 键 词： | 化学束外延 生长动力学 半导体材料 半导体器件 |
Chemical Beam Epitaxy and Its Applications for Semiconductor Materials and Devices |
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| Zhong Jingchang Changchun Institute of Optics and Fine Mechanics.Chemical Beam Epitaxy and Its Applications for Semiconductor Materials and Devices[J].Semiconductor Optoelectronics,1990,11(1):40-48. |
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| Authors: | Zhong Jingchang Changchun Institute of Optics and Fine Mechanics |
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| Affiliation: | Zhong Jingchang Changchun Institute of Optics and Fine Mechanics |
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| Abstract: | Chemical beam epitaxy(CBE),a novel technique for thin-film crystal growth,is introduced.The basic concepts,growth dynamics and applications for semiconductor materials and devices of this technique are presented by comparision with both techniques of molecular beam epitaxy(MBE)and metallorganic chemical vapor deposition(MOCVD). |
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| Keywords: | CBE Growth Dynamics Semiconductor Materials and Devices |
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