CMOS电路瞬态电流测试方法研究

集成电路设计与测试是当今计算机技术研究的主要问题之一。集成电路测试技术是生产高性能集成电路和提高集成电路成品率的关键。基于固定型故障模型的测试方法已不能满足高性能集成电路,尤其是对CMOS电路的测试要求。CMOS电路的瞬态电流(IDDT)测试方法自80年代提出以来,已被工业界采用,作为高可靠芯片的测试手段。

On Method of Testing the Transient Current of a CMOS Circuit

IC design and test is one of the major research areas in computer technology today. Testing based on stuck at fault model is insufficient for high performance ICs, especially for CMOS circuits. Using IDDQ testing can reduce the cost of testing and enhance the reliability of the chip remarkably. However, some defects, such as some stuck-open defects in CMOS ICs still cannot be detected by IDDQ testing or by logic testing, and at the same time it faced some challenges of increasing leak electric current in deep submicro technology. Due to these limitations, in order to improve the fault coverage of the testing to meet the demands of people, the dynamic current (IDDT) testing was proposed to detect some faults that cannot be detected by other testing methods.