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Ion implanted GaAs bipolar transistors |
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| Authors: | Yuan H.T. Doerbeck F.H. McLevige W.V. |
| Affiliation: | Texas Instruments Incorporated, Dallas, USA; |
| Abstract: | GaAs n-p-n bipolar transistors were fabricated by ion implanting Be and Se into bulk n-type substrate material. Devices with mesa collectors exhibit a d.c. current gain hFE ? 8 and a reverse bias leakage current of less than 10 nA. |
| Keywords: | |