| MOSFET集约模型的发展 |
| |
| 引用本文： | 伍青青,陈静,罗杰馨,肖德元,王曦.MOSFET集约模型的发展[J].固体电子学研究与进展,2010,30(2). |
| |
| 作者姓名： | 伍青青 陈静 罗杰馨 肖德元 王曦 |
| |
| 作者单位： | 中国科学院微系统与信息技术研究所,上海,200050 |
| |
| 摘 要： | MOSFET集约模型作为连接半导体生产商与电路设计者之间的桥梁,是半导体行业不可或缺的一环。随着对器件物理效应的不断深入了解,以及不断满足电路设计新要求,MOSFET集约模型经历了长时间的发展。从模型的基础出发,介绍了基于阈值电压Vth、反型层电荷Qi和表面势Φs这三类MOSFET集约模型的发展历程及其主要特征。
|
| 关 键 词： | 场效应晶体管 集约模型 BSIM模型 HiSIM模型 PSP模型 |
Development of MOSFET Compact Models |
| |
| WU Qingqing,CHEN Jing,LUO Jiexin,XIAO Deyuan,WANG Xi.Development of MOSFET Compact Models[J].Research & Progress of Solid State Electronics,2010,30(2). |
| |
| Authors: | WU Qingqing CHEN Jing LUO Jiexin XIAO Deyuan WANG Xi |
| |
| Abstract: | MOSFET compact models,which link the foundries and the circuit designers,are indispensable in semiconductor industry.They have been developed for decades with more insight in physical effects and more demand in circuit design.From the basis of compact models,the developments and the characteristics of the threshold based models,the charge based models and the potential based models are introduced. |
| |
| Keywords: | MOSFET compact model BSIM HiSIM PSP |
| 本文献已被 万方数据 等数据库收录！ |
|
