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MOS structures with amorphous tungsten trioxide for capacitive humidity sensors
Authors:E. A. Tutov
Affiliation:(1) Voronezh State University, Universitetskaya pl. 1, Voronezh, 394693, Russia
Abstract:Electrical characteristics of the Al/a-WO3/n-Si structure under conditions of water vapor sorption were studied. The parameters of this structure as a capacitive humidity sensor were determined.
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