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Electrical and interface properties of Au/DNA/n-Si organic-on-inorganic structures |
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| Authors: | Salih Okur Fahrettin Yakuphanoglu P?nar Kara Kadayifcilar |
| Affiliation: | a Department of Physics, Izmir Institute of Technology, Gulbahce Campus, Urla, Izmir 35430, Turkey b Physics Department, Firat University, Elazig 23169, Turkey c Department of Analytical Chemistry, Faculty of Pharmacy, Ege University, Bornova, Izmir 35100, Turkey |
| Abstract: | The effect of the thickness and coverage rate of a DNA film on the electrical and interface properties of Au/DNA/n-Si organic-on-inorganic structures has been investigated. The thin film properties of the DNA deposited on n-Si wafer were characterized by atomic force microscopy. The effect of the thickness and coverage rate of the DNA layer was investigated by evaluating electrical parameters, such as the barrier height, ideality factor, series resistance, and interface state density. The thickness and coverage rate of the DNA layer significantly affects the electrical properties of the Au/DNA/n-Si organic-on-inorganic structures. The interface state density properties of the Au/DNA/n-Si diodes were determined by conductance technique. The results show that the interface state density decreases with decrease in both film thickness and coverage rate of the DNA in an acetate buffer, modifying the electronic parameters of the Au/DNA/n-Si diodes. |
| Keywords: | Organic/inorganic junction DNA Ideality factor |
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