Effect of deposition conditions on charging processes in SiNx: Application to RF-MEMS capacitive switches |
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| Authors: | Richard Daigler Matroni Koutsoureli John Papapolymerou |
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| Affiliation: | a School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, USA
b Solid State Physics Section, Physics Department, University of Athens, 15784 Zografou, Greece |
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| Abstract: | The paper presents a systematic investigation of dielectric charging in low temperature silicon nitride for RF-MEMS capacitive switches. The dielectric charging is investigated with the aid of Metal-Insulator-Metal (MIM) capacitors with different thickness dielectric film and symmetric and asymmetric metal contacts. The experimental results demonstrate that the charging process is almost symmetric in low temperature deposited silicon nitride. Experiments performed in both MIM and MEMS reveal that the charging process is strongly affected by temperature. Specifically at high temperatures the charging rate increases exponentially with temperature. |
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| Keywords: | Dielectric charging MIM capacitor MEMS capacitive switch Silicon nitride |
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