Formation of shallow photodiodes by implantation of boron into mercury cadmium telluride |
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| Authors: | Pitcher PG Hemment PLF Davis QV |
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| Affiliation: | University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK; |
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| Abstract: | Hall-effect measurements on p-type MCT implanted with 1 × 1014 B+/cm2 at 150 keV show that an abrupt junction is formed at a depth of 0.6 ± 0.12 ?m after annealing at 230° for 7 min with a ZnS cap. Prior to the anneal the carrier profile was graded and extended to a depth of 5.0 ± 1.0 ?m. Photodiodes have been formed by a dual implant of 5 × 1014 B+/cm2 at 100 keV and 50 keV, and after annealing a five-fold improvement in Ro A has been measured to give a value of 1.2 ?cm2. |
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