Sn2P2S6 films for memory devices with nondestructive readout |
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| Authors: | Elena Arnautova Eugene Sviridov Eugene Rogach Esther Savchenko Anatoly Grekov |
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| Affiliation: | Rostov-on-Don State University, Pedagogical Institute , Rostov-on-Don, Russia |
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| Abstract: | The polarization switching processes of ferroelectric polycrystalline Sn2P2S6 films on Al substrates were studied. The effect of full reverse spontaneous switching after the influence of a repolarizing pulse on the prepoled sample was investigated. This opens the way for making the ferroelectric memory devices with rapid nondestructive readout. |
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| Keywords: | PZT film Zr/Zr+Ti ratio MOCVD RTA MPB |
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