| 国内MOCVD化合物半导体材料的新进展 |
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| 引用本文： | 张桂成.国内MOCVD化合物半导体材料的新进展[J].上海有色金属,1990(2). |
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| 作者姓名： | 张桂成 |
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| 作者单位： | 中国科学院上海冶金研究所 |
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| 摘 要： | 金属有机气相沉积法(MOCVD)已受到国内外普遍重视,MOCVD技术所用的关键原材料也已研制成功。近年来,国内采用MOCVD技术在GaAs衬底上已生长出GaAlAs、HgCdTe、ZnSe等异质结材料,以InP、CaF_2作衬底,也生长了某些半导体薄膜材料。
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| 关 键 词： | 化学气相沉积法 化合物半导体 异质结 |
Recent Development of Compound Semiconducting Materials of MOCVD at Home |
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| Zhang Guicheng.Recent Development of Compound Semiconducting Materials of MOCVD at Home[J].Shanghai Nonferrous Metals,1990(2). |
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| Authors: | Zhang Guicheng |
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| Abstract: | MOCVD process is highly valued both at home and abroad. Raw materials of paramount importance for the process are successfully developed. During the last few years, some heterogeneous materials such as GaAlAs, HgCdTe and ZnSe have been grown on GaAs substrate and some semiconducting thin films have also been grown on InP and CaF_2 substrates. |
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| Keywords: | CVD process Compound Semiconductor Hetrojunction |
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