108-GHz GaInAs/InP p-i-n photodiodes with integrated bias tees andmatched resistors |
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| Authors: | Yih-Guei Wey Giboney K.S. Bowers J.E. Rodwell M.J.W. Silvestre P. Thiagarajan P. Robinson G.Y. |
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| Affiliation: | Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA; |
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| Abstract: | Connections to bulk bias tees and various mismatched loads degrade the usable frequency response of high-speed photodetectors. Monolithic integration of passive components to enhance the realizable performance of high-bandwidth, long-wavelength photodiodes is demonstrated. Circuits having bias tees and matched resistors integrated with 7-μm×7-μm photodiodes show usable electrical bandwidths exceeding 100 GHz |
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