Low-threshold native-oxide confined narrow-stripe folded-cavity surface-emitting InGaAs-GaAs lasers |
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| Authors: | Yong Cheng Gye Mo Yang M.H. MacDougal P.D. Dapkus |
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| Affiliation: | Dept. of Electr. Eng./Electrophys., Univ. of Southern California, Los Angeles, CA, USA; |
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| Abstract: | Narrow-stripe folded-cavity surface-emitting InGaAs-GaAs lasers are demonstrated, AlAs native-oxide layers above and below waveguide region are employed for current and optical confinement to form narrow-stripe InGaAs-GaAs quantum-well lasers. A low-temperature (400/spl deg/C) selective wet-oxidation technique and an ion-beam-etching technique are used to fabricate insulator confined narrow-stripes and internal 45/spl deg/ deflectors, respectively. Continuous-wave threshold currents as low as 4.5 mA and 59% surface-emitting quantum efficiencies are achieved on the devices with 2-/spl mu/m-wide aperture and a 420-/spl mu/m-long cavity. |
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