n(p)-InP-n-In2O3-P2O5-Pd diode structures as potential sensors for near-infrared radiation, moisture, and hydrogen |
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| Authors: | S V Slobodchikov Kh M Salikhov |
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| Affiliation: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg |
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| Abstract: | Diode structures based on n(p)-InP with intermediate n-In2O3 and P2O5 layers were fabricated by electrochemical deposition of Pd. It is shown that when exposed to pulses of water vapor the photo-emf
of the structures varies by 60–400% and in the presence of H2 it can vary by 1.5–2 orders of magnitude. These n(p)-InP-n-In2O3-P2O5-Pd structures are potential sensors for near-infrared radiation, moisture, and hydrogen.
Pis’ma Zh. Tekh. Fiz. 25, 72–78 (December 26, 1999) |
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