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| 车载IGBT器件封装装片工艺中空洞的失效研究 | |
| 引用本文： | 施建根,孙伟锋,景伟平,孙海燕,高国华.车载IGBT器件封装装片工艺中空洞的失效研究[J].电子与封装,2010,10(2):23-27. |
| 作者姓名： | 施建根 孙伟锋 景伟平 孙海燕 高国华 |
| 作者单位： | 1. 东南大学,南京,210096;南通富士通微电子股份有限公司,江苏,南通,226006 2. 东南大学,南京,210096 3. 南通大学,江苏,南通,226019 4. 南通富士通微电子股份有限公司,江苏,南通,226006 |
| 摘 要： | IGBT芯片在TO-220封装装片时容易形成空洞,焊料层中空洞大小直接影响车载IGBT器件的热阻与散热性能,而这些性能的好坏将直接影响器件的可靠性。文章分析了IGBT器件在TO-220封装装片时所产生的空洞的形成机制,并就IGBT器件TO-220封装模型利用FEA方法建立其热学模型,模拟结果表明:在装片焊料层中空洞含量增加时,热阻会急剧增大而降低IGBT器件的散热性能,IGBT器件温度在单个空洞体积为10%时比没有空洞时高出28.6℃。同时借助工程样品失效分析结果,研究TO-220封装的IGBT器件在经过功率循环后空洞对于IGBT器件性能的影响,最后确立空洞体积单个小于2%,总数小于5%的装片工艺标准。 |
| 关 键 词： | IGBT 装片 空洞 热阻 失效研究 |
Failure Analysis of Voids in Automotive IGBT Die Attach Process |
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| SHI Jian-gen,SUN Wei-feng,JING Wei-ping,SUN Hai-yan,GAO Guo-hua.Failure Analysis of Voids in Automotive IGBT Die Attach Process[J].Electronics & Packaging,2010,10(2):23-27. | |
| Authors: | SHI Jian-gen SUN Wei-feng JING Wei-ping SUN Hai-yan GAO Guo-hua |
| Affiliation: | 1. Southeast University;Nanjing 210096;China;2. Jiangsu Province Key Lab;Nantong University;Nantong 226019;3. Nantong Fujitsu Microelectronics Co.;Ltd.;Nantong 226006;China |
| Abstract: | Die attach process for IGBT TO-220 package style will easily induce voids in the solder layer. Thermal impedance and performance that determine the reliability of IGBT device will be influenced by void percentage in the solder layer. The causes of the voids in the die attach process are presented in this paper. The correlation between void percentage and thermal impedance was found through a thermal impendence model through FEA method. The simulation results showed that when the voids increase in the solder... |
| Keywords: | IGBT die attach void thermal impedance failure analysis |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |