n-Type CVD diamond: Epitaxy and doping

Diamond is a semiconductor with superlative properties in terms of operating temperature, breakdown voltage and thermal dissipation for high power electronic applications. The p-type doping is currently controlled but it is not the case for the n-type doping. In spite of the low solubility of substitutional donors bigger than carbon, n-type material can be achieved via impurity doping during the growth of diamond with phosphorus dopant (E_c = 0.6 eV). Theoretical studies also predict arsenic as a shallower dopant (E_c = 0.4 eV). This paper outlines the n-type doping issues with phosphorus and explores the arsenic doping.