The uniformity of Al distribution in aluminum-doped zinc oxide films grown by atomic layer deposition |
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| Authors: | G Luka L WachnickiBS Witkowski TA KrajewskiR Jakiela E GuziewiczM Godlewski |
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| Affiliation: | a Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
b Department of Mathematics and Natural Sciences, College of Science, Cardinal Stefan Wyszynski University, Warsaw, Poland |
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| Abstract: | We investigated the aluminum distribution in aluminum-doped zinc oxide films grown by atomic layer deposition. Surface morphology, structure, composition and electrical properties of obtained films were studied. For the aluminum content less than 2 at.%, a periodicity of Al distribution along the layer depth was observed. This periodicity diminished significantly after annealing the samples in nitrogen atmosphere at 300 °C. For the Al content higher than 2 at.%, its distribution in ZnO:Al films was uniform within the depth measurement accuracy of ∼5-10 nm. |
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| Keywords: | Aluminum-doped zinc oxide Thin films Atomic layer deposition |
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