The uniformity of Al distribution in aluminum-doped zinc oxide films grown by atomic layer deposition |
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Authors: | G. Luka L. WachnickiB.S. Witkowski T.A. KrajewskiR. Jakiela E. GuziewiczM. Godlewski |
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Affiliation: | a Institute of Physics, Polish Academy of Sciences, Warsaw, Poland b Department of Mathematics and Natural Sciences, College of Science, Cardinal Stefan Wyszynski University, Warsaw, Poland |
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Abstract: | We investigated the aluminum distribution in aluminum-doped zinc oxide films grown by atomic layer deposition. Surface morphology, structure, composition and electrical properties of obtained films were studied. For the aluminum content less than 2 at.%, a periodicity of Al distribution along the layer depth was observed. This periodicity diminished significantly after annealing the samples in nitrogen atmosphere at 300 °C. For the Al content higher than 2 at.%, its distribution in ZnO:Al films was uniform within the depth measurement accuracy of ∼5-10 nm. |
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Keywords: | Aluminum-doped zinc oxide Thin films Atomic layer deposition |
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