| InP基In0.53Ga0.47As光电探测器的量子效率优化 |
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| 引用本文： | 田招兵,顾溢,张永刚.InP基In0.53Ga0.47As光电探测器的量子效率优化[J].红外与毫米波学报,2008,27(2):81-85. |
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| 作者姓名： | 田招兵 顾溢 张永刚 |
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| 作者单位： | 1. 中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海,200050;中国科学院研究生院,北京,100039
2. 中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海,200050 |
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| 基金项目： | Knowledge innovation program of Chinese Academy of Sciences, Shanghai STC Project (06ZR14104) and SIMTEC Project |
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| 摘 要： | 建立了不同结构的InP基PIN型In0.53Ga0.47As探测器光响应的物理模型.通过引入收集效率函数,模拟计算了探测器量子效率和光响应.采用该模型分别研究了正面进光和背面进光情况下典型的In0.53Ga0.047As/InP PIN探测器的结构参数对器件量子效率的影响.在此基础上提出了两种改进的背照射InGaAs/InP探测器结构,并讨论了其结构参数的优化.
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| 关 键 词： | 短波红外 光伏型探测器 InGaAs 量子效率 short-wave-infrared photovoltaic detectors InGaAs quantum efficiency |
| 文章编号： | 1001-9014(2008)02-0081-05 |
| 收稿时间： | 2007/11/15 |
| 修稿时间： | 2007年11月15 |
QUANTUM EFFICIENCY OPTIMIZATION OF InP-BASED In0.53Ga0.47As PHOTODETECTORS |
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| TIAN Zhao-Bing,GU Yi,ZHANG Yong-Gang.QUANTUM EFFICIENCY OPTIMIZATION OF InP-BASED In0.53Ga0.47As PHOTODETECTORS[J].Journal of Infrared and Millimeter Waves,2008,27(2):81-85. |
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| Authors: | TIAN Zhao-Bing GU Yi ZHANG Yong-Gang |
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| Abstract: | A modified physical model on the optical response of InP-based In0.53Ga0.47As PIN photodetectors was presented. By introducing a collecting factor, the optical response and quantum efficiency were simulated. The influences of device parameters on quantum efficiency of typical In0.53Ga0.47As/InP PIN photodetectors under both front and backside illuminated conditions were investigated by using our model. Furthermore, two modified InGaAs/InP PD structures for back-illumination were proposed, and the optimal structural parameters were discussed. |
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| Keywords: | short-wave-infrared photovoltaic detectors InGaAs quantum efficiency |
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